A monolithic wideband variable gain amplifier with a high gain range and low distortion
作者： P.J.G. van Lieshout , R.J. van de Plassche
DOI: 10.1109/ISSCC.1997.585420
关键词: Topology 、 Charge amplifier 、 Fully differential amplifier 、 Open-loop gain 、 Control theory 、 Amplifier 、 Input offset voltage 、 Phase margin 、 Direct-coupled amplifier 、 Physics 、 Instrumentation amplifier
摘要: This variable-gain amplifier has architecture in which the linear input region is inversely proportional to gain of circuit. It incorporates a plurality differential pairs (DP) coupled parallel, forming transadmittance stage. The each DP provided with signal voltage, shifted by an offset voltage. voltage individual variable and independent other offsets. When all voltages are equal, stage set maximum gain. then comparable that single made equidistant at about 40 60 mV, minimum range increased compared situation dependent on number DPs. Gain settings between achieved values equidistance 0 mV. A prototype 1 /spl mu/m triple metal bipolar process. contains 32 parallel DPs as well output. 25 dB. Active chip area 0.15 mm/sup 2/. Supply 5 V bandwidth 35 MHz power dissipation mW.
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