A 100 MHz to 1 GHz Variable Gain Amplifier in a 8 GHz 1.2µm BiCMOS Process
作者： Juha Häkkinen , Timo Rahkonen , Juha Kostamovaara
关键词: Physics 、 Phase margin 、 Electronic engineering 、 Gain compression 、 Optoelectronics 、 Fully differential amplifier 、 Variable-gain amplifier 、 RF power amplifier 、 Gain stage 、 Differential gain 、 Open-loop gain
摘要: A variable gain amplifier with linear control has been implemented in a commercially available 8 GHz 1.2 µm BiCMOS process. The adjustment linearization is based on forcing linearly controllable current through diode-connected transistors, thus generating an internal logarithmic voltage for the Gilbert-type cell. Cherry-Hopper type stage used to provide most of gain. Thus, maximum differential 10 dB over 1 bandwidth and −6.9 dBm input −-1 compression power. Gain range 50 at 200 MHz 38 960 reported. chip area 1.15 × 2.15 mm it consumes 40 mA from 5 V supply.
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