On the semiconductor laser logarithmic gain-current density relation
作者： T.A. DeTemple , C.M. Herzinger
DOI: 10.1109/3.236138
关键词: Quantum well 、 Diode 、 Atomic physics 、 Density of states 、 Semiconductor laser theory 、 Physics 、 Current density 、 Spontaneous emission 、 Semiconductor 、 Laser
摘要: The simplified relation, alpha =G/sub 0/ In ( eta /sub i/J/J/sub 0/), between material gain and current density J is shown to be a very good shape approximation, for quantum wells bulk materials, essentially independent of the type recombination processes present. Simulations show that given system, G/sub decreases by only about 30% from pure electron-hole-recombination-dominated Auger-recombination-dominated. A generic quantum-well situation explored reveal states coefficient dependence formulate simple estimates 0/. results were tested against published data eight diode lasers. predicted values generally found in agreement with experiments wider gap diodes. discrepancies attributed part carrier induced absorption, it formalism can modified selected cases incorporate this without changing basic form gain. new expression which relates temperature measured parameters characteristic temperature, T/sub 0/, provided. >
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