Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots
作者： D. Morris , N. Perret , S. Fafard
DOI: 10.1063/1.125398
关键词: Spectroscopy 、 Photon 、 Excitation 、 Photoluminescence 、 Auger effect 、 Molecular physics 、 Wetting layer 、 Quantum dot 、 Chemistry 、 Condensed matter physics 、 Relaxation (NMR)
摘要: Carrier relaxation processes are investigated in self-assembled InAs/GaAs quantum dots using time-resolved photoluminescence spectroscopy. The quantum-dot rise time has been measured as functions of carrier excitation density and wavelengths. is about 32 ps at low decreases by 1 over the from 3 W/cm2, under nonresonant laser excitation. threshold this density-dependent regime occurs a slightly higher wavelength increases it disappears when photon pumping energy below wetting layer barrier energy. These results clearly establish where Auger become dominant mechanism these dots.
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