Ferroelectric integrated circuit having hydrogen barrier layer
作者： Carlos A. Paz de Araujo , Larry D. McMillan , Joseph D. Cuchiaro
DOI:
关键词: Tungsten nitride 、 Inorganic chemistry 、 Titanium nitride 、 Materials science 、 Niobium nitride 、 Silicon nitride 、 Tantalum nitride 、 Oxide 、 Diffusion barrier 、 Nitride 、 Composite material
摘要: A hydrogen diffusion barrier (130, 330) in an integrated circuit (170, 270, 370, 470) is located to inhibit of a thin film (124) metal oxide material circuit. The comprises at least one the following nitrides: aluminum titanium nitride (Al2Ti3N6), silicon (Al2Si3N6), niobium (AlNb3N6), tantalum (AlTa3N6), copper (Al2Cu3N4), tungsten (WN), and (Cu3N2). ferroelectric or high-dielectric, nonferroelectric material. Preferably, layered superlattice layer directly over oxide.
google.nl 参考文章(14)
William D. Miller, Joseph T. Evans, William H. Shepherd, Wayne I. Kinney, Ferroelectric capacitor and memory cell including barrier and isolation layers ,(1987)
Carlos A. Paz de Araujo, Larry D. McMillan, Michael C. Scott, Joseph D. Cuchiaro, Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current ,(1993)
Takashi Mihara, Hiroyuki Yoshimori, John W. Gregory, Carlos A. Paz de Araujo, Larry D. McMillan, Ferroelectric non-volatile memory unit ,(1994)
Takashi Mihara, Hiroyuki Yoshimori, Hitoshi Watanabe, Carlos A. Paz de Araujo, Larry D. McMillan, Michael C. Scott, Joseph D. Cuchiaro, Process for fabricating layered superlattice materials and making electronic devices including same ,(1993)
Carlos A. Paz de Araujo, Larry D. McMillan, Methods and apparatus for material deposition ,(1989)
Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Yoichi Miyasaka, Akira Furuya, Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation ,(1998)
Takashi Mihara, Hiroyuki Yoshimori, Shuzo Hiraide, Hitoshi Watanabe, Carlos A. Paz de Araujo, Larry D. McMillan, Integrated circuit with layered superlattice material and method of fabricating same ,(1993)
Katsumi Ogi, Hiroto Uchida, Nobuyuki Soyama, Carlos A. Paz de Araujo, Kensuke Kageyama, Larry D. McMillan, Michael C. Scott, Joseph D. Cuchiaro, Gary F. Derbenuick, Method of fabricating an integrated circuit using self-patterned thin films ,(1996)
Hiroyuki Yoshimori, Hitoshi Watanabe, Carlos P. de Araujo, Larry D. McMillan, Takashi Mihara, Process for fabricating ferroelectric integrated circuit ,(1995)
Akira Fujisawa, Kazuhiro Takenaka, Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film ,(1994)