Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device

摘要: One illustrative method disclosed herein includes forming a trench/via in layer of insulating material, barrier the trench/via, copper-based seed on layer, converting at least portion into nitride depositing bulk material so as to overfill and performing one chemical mechanical polishing process remove excess materials positioned outside thereby define conductive structure. A device structure within silicon or germanium between material.