Wrap-around gate field effect transistor

摘要: A field effect transistor is formed having wrap-around, vertically-aligned, dual gate electrodes. Starting with an silicon-on-insulator (SOI) structure a buried silicon island, vertical reference edge defined, by creating cavity within the SOI structure, and used during two etch-back steps that can be reliably performed. The first removes portion of oxide layer for distance over which conductor material then applied. second distance. difference between distances defines length eventual device. After stripping away layers, electrode revealed surrounds island on all four side surfaces.