Semiconductor device including insulating film having opening portion and conductive film in the opening portion
作者： Hidekazu Miyairi , Shinya Sasagawa , Shunpei Yamazaki
DOI:
关键词: Electrical conductor 、 Electrode 、 Optoelectronics 、 Integrated circuit 、 Oxide semiconductor 、 Materials science 、 Semiconductor device 、 High productivity 、 Contact hole 、 Transistor
摘要: Provided is a semiconductor device that occupies small area, highly integrated device, or with high productivity. To fabricate an circuit, first insulating film formed over p-channel transistor; transistor including oxide the film; second opening, is, contact hole part of sidewall which transistor, in and electrode connecting to each other formed.
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