CVD system and CVD process
作者： Yoshiaki Inaishi , Nakao Akutsu , Kazuhiro Aoyama , Koh Matsumoto , Junichi Hidaka
DOI:
关键词: Process (computing) 、 Electronic engineering 、 Substrate (printing) 、 Compound semiconductor 、 Deposition (phase transition) 、 Optoelectronics 、 Materials science 、 Thin film
摘要: Provided are a CVD system and process which can grow excellent compound semiconductor thin films of two or more components having least defects enjoy high source gas utilization efficiency increased productivity. According to the process, at kinds gases introduced parallel surface substrate 11 placed in reactor 10 film on . The contains separators 18, 19 disposed upstream side mounting section be so as define three layers passages consisting first passage 20 , second 21 third 22 ; introducing pipe 23 communicating 24 deposition accelerating 25 22.
lens.org 参考文章(7)
Kazumasa Hiramatsu, Isamu Akasaki, Hiroshi Nijigaoka-Higashidanchi Amano, Atsushi c, o Pioneer Electronic Corp. Watanabe, Compound semiconductor vapor phase epitaxial device ,(1993)
Akiyoshi Mikami, Masaru Yoshida, Kouji Taniguchi, Kousuke Terada, Koichi Tanaka, Shigeo Nakajima, Method of manufacturing an electroluminescent device ,(1991)
清 久保田, Kiyoshi Kubota, Thin film vapor growth device ,(1993)
Hara Kunihiko, Hiramatsu Kazutsugu, Takeuchi Shinjiro, Mitsunashi Akira, DEVICE FOR DETECTING POSITION OF BURIED METALLIC OBJECT ,(1995)
Tanaka Hitoshi, VAPOR GROWTH DEVICE AND VAPOR GROWTH ,(1991)
Maruyama Kenji, VAPOR PHASE EPITAXY DEVICE ,(1989)
Ishida Shinya, VAPOR GROWTH APPARATUS ,(1997)