Multiple inlet atomic layer deposition reactor

作者: Jeong-Ho Lee , Dae-Youn Kim , Yong-Min Yoo

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摘要: A reactor configured to subject a substrate alternately repeated surface reactions of vapor-phase reactants is disclosed. The includes reaction chamber, plurality inlets, and an exhaust outlet. chamber space. also gas flow control guide structure within the chamber. resides over space interposed between inlets channels, each channels extends from one upstream periphery Each progressively widens as channel inlet further holder in

参考文章(25)
Yoshiaki Inaishi, Nakao Akutsu, Kazuhiro Aoyama, Koh Matsumoto, Junichi Hidaka, Ichitaro Waki, Takayuki Arai, CVD system and CVD process ,(1997)
Won-Gu Kang, Chun-Soo Lee, Kyoung-Soo Yi, Kyu-Hong Lee, Chemical deposition reactor and method of forming a thin film using the same ,(2000)
Sven Lindfors, Niklas Bondestam, ALD reactor and method with controlled wall temperature ,(2001)
Sven Lindfors, Pekka Soininen, Tuomo Suntola, Method and equipment for growing thin films ,(1995)
Fangli Hao, Javad Pourhashemi, Rajinder Dhindsa, Reaction chamber component having improved temperature uniformity ,(1999)
Fangli Hao, Rajinder Dhindsa, Eric Lenz, Gas distribution apparatus for semiconductor processing ,(2000)