Chemical deposition reactor and method of forming a thin film using the same

摘要: A chemical deposition reactor capable of switching rapidly from one process gas to another and method forming a thin film using the same. The present invention comprises: cover, having an inlet outlet, for keeping reactant gases other part where pressure is lower than inside reactor; flow control plate, fixed onto controlling through outlet by spacing between itself cover; substrate supporting plate confining reaction cell with cover. can be accomplished above reactor. In method, including gas, purge are sequentially repeatedly supplied in form on substrate. RF (Radio Frequency) plasma power applied electrode synchronised supply at least among gases.