Plasma reactor having slotted manifold
作者： David J. Drage
DOI:
关键词: Analytical chemistry 、 Mechanical engineering 、 Plasma reactor 、 Baffle 、 Wafer 、 Surface (mathematics) 、 Manifold (fluid mechanics) 、 Materials science
摘要: A plasma reactor apparatus is disclosed in which plates having channels are used to redistribute gas uniformly over the surface of a wafer being processed reactor. Slot means adjacent provide final baffle prevent jetstreams from impinging directly on wafer.
lens.org 参考文章(4)
Lee Chen, Stanley J. Poloncic, Charles J. Hendricks, Gangadhara S. Mathad, Single wafer plasma etch reactor ,(1984)
Richard F. Reichelderfer, John T. Davies, Computer controlled system for processing semiconductor wafers ,(1980)
Josef T. Hoog, Georges J. Gorin, Plasma reactor apparatus ,(1979)
Kanetake Takasaki, Kenji Koyama, Masao Sugita, Manufacturing device of semiconductor ,(1982)