Slip and twinning in high-stress-deformed GaAs and the influence of doping
作者： Y. Androussi , G. Vanderschaeve , A. Lefebvre
DOI: 10.1080/01418618908221170
关键词: Condensed matter physics 、 Crystal twinning 、 Macle 、 Slip (materials science) 、 Partial dislocations 、 Crystallography 、 Optical microscope 、 Deformation mechanism 、 Materials science 、 Overburden pressure 、 Nucleation
摘要: Abstract The mechanisms of plastic deformation GaAs at room temperature have been studied using optical microscopy and transmission electron microscopy. This work was performed on crystals deformed by high-stress compression under a confining pressure. Two competitive were found: perfect dislocation glide microtwinning. Twinning is all the more important as yield stress high this clearly depends doping. microtwins are produced gliding B§ partial dislocations. mobilities these partials also studied; 90° always mobile than 30° partials. difference analysed in terms nucleation migration double kinks
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