Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate
作者： Wen Sun , Yanan Guo , Hongyi Xu , Qiang Gao , Hark Hoe Tan
DOI: 10.1063/1.4834377
关键词: Chemical vapor deposition 、 Materials science 、 Crystallography 、 Nanolithography 、 Substrate (electronics) 、 Transmission electron microscopy 、 Metalorganic vapour phase epitaxy 、 Semiconductor 、 Epitaxy 、 Nanowire
摘要: Simultaneous growth of ⟨111⟩B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed investigated by electron microscopy crystallographic analysis. It was found that the both ternary via Au catalysts driven fact prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in case nanowires, their underlying nanowires; while each catalyst remain side material during nanowire growth.
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