Evolution of Epitaxial InAs Nanowires on GaAs (111)B
作者： Xin Zhang , Jin Zou , Mohanchand Paladugu , Yanan Guo , Yong Wang
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摘要: A systematic investigation of the Au catalyst-assisted growth epitaxial InAs nanowires (NW) on GaAs substrates was presented. Scanning electron microscopy (SEM) images NWs with different times show no vertical in sample 1 min InAs. High resolution transmission (HRTEM) investigations performed at trace/substrate interface to determine strain status many misfit dislocations InAs/GaAs interface. The interfacial energy InAs/Au is found be higher than that GaAs/Au, and these energetic considerations result catalysts retaining contact GaAs. Vertical initiate trace intersections where can not retain interfaces substrate. HRTEM image showing junction between base clearly present epitaxially grown trace.
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core.ac.uk参考文章(24)
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