Indium arsenide: a semiconductor for high speed and electro-optical devices

摘要: Abstract Indium arsenide is a direct gap semiconductor (0.36 eV at 300 K and 0.40 77 K) with high electron mobility (greater than 20 000 cm2V-t-1s−1 approximately 60 cm2V−1s−1 K). The hole mobilities are in the range 100–400 cm2V−1s−1. Its electro-optical properties of interest for IR out to about 3 μm 8 conjunction In(As,Sb) alloys. Lattice matched heterojunctions can be obtained alloys such as AlxGa1−x- AsySb1−y. InAs has also been grown on non-lattice-matched semiconductors GaSb, InP, GaAs AlSb, exhibited interesting quantum well actions. field effect transistor (FET) modulated doped (MODFET) promising but have not fully developed. low avalanche action (about 105V−1s−1 presents some device limitations.