Quantitative analysis of buried interfacial impurity layers by SIMS and RBS
作者： Peter Williams , Judith E. Baker , John A. Davies , Tom E. Jackman
DOI: 10.1016/0029-554X(81)91022-3
关键词: Detection limit 、 Impurity 、 Thin film 、 Bismuth 、 Materials science 、 Calibration 、 Monolayer 、 Secondary ion mass spectrometry 、 Analytical chemistry 、 Quantitative analysis (chemistry)
摘要: Abstract In order to test the quantitative accuracy of secondary ion mass spectrometry (SIMS) analysis interfacial layers using ion-implanted standards, we have compared SIMS and Rutherford backscattering (RBS) analyses buried silver (about 1015 Ag/cm2) at silicon-silicon thin film interfaces. The interface concentration was determined by RBS on a system whose calibration checked bismuth implant standard. At same time, measurements were made set silver-implanted samples. These implants subsequently used as standards in layers. results independent indicate that interfaces can be performed with relative bettet than 15% detection limits 10−3 monolayer.
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