Factors affecting precision and accuracy in quantitative analysis by secondary ion mass spectrometry
作者： Ray Chern. Deng , Peter. Williams
DOI: 10.1021/AC00192A035
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摘要: En analyse quantitative par spectrometrie SIMS utilisant des etalons externes, la fidelite et precision mesures sont alterees le mauvais alignement echantillons les distributions d'energie differentes ions secondaires. Cette etude montre que erreurs d'alignement conduisent a une discrimination entre especes ioniques analysees references, causant significatives dans comparaison deux
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sci-hub.se 参考文章(5)
Peter Williams, Ion-stimulated desorption of positive halogen ions Physical Review B. ,vol. 23, pp. 6187- 6190 ,(1981) , 10.1103/PHYSREVB.23.6187
G. Slodzian, Some problems encountered in secondary ion emission applied to elementary analysis Surface Science. ,vol. 48, pp. 161- 186 ,(1975) , 10.1016/0039-6028(75)90315-5
K. Wittmaack, Ionization Mechanism ofH+Sputtered from Hydrogenated Silicon Physical Review Letters. ,vol. 43, pp. 872- 875 ,(1979) , 10.1103/PHYSREVLETT.43.872
Peter Williams, Judith E. Baker, John A. Davies, Tom E. Jackman, Quantitative analysis of buried interfacial impurity layers by SIMS and RBS Nuclear Instruments and Methods in Physics Research. ,vol. 191, pp. 318- 322 ,(1981) , 10.1016/0029-554X(81)91022-3
D. P. Leta, G. H. Morrison, Ion implanted standards for secondary ion mass spectrometric determination of the Group IA-VIIA elements in semiconducting matrixes Analytical Chemistry. ,vol. 52, pp. 514- 519 ,(1980) , 10.1021/AC50053A032