作者: D.R. McKenzie , Y. Yin , N.A. Marks , C.A. Davis , B.A. Pailthorpe
DOI: 10.1016/0925-9635(94)90185-6
关键词: Plasmon 、 Amorphous carbon 、 Photoconductivity 、 Field-effect transistor 、 Electron diffraction 、 Inorganic chemistry 、 Hydrogen 、 Materials science 、 Analytical chemistry 、 Spectroscopy 、 Doping
摘要: Abstract Amorphous carbon containing very little hydrogen and having a highly tetrahedral character is deposited by filtered cathodic arc. This amorphous shows photoconductivity under white light illumination. It slightly p-type in pure form but becomes n-type when doped with nitrogen. Electron diffraction that nitrogen levels of less than 1% do not distort the network, at higher concentrations destabilises structure. Plasmon spectroscopy presence 1 nm “defective” surface layer even material which has implications for device applications. A junction field effect transistor structure proposed as possible device.