Formation of SiH bonds on the surface of microcrystalline silicon covered with SiOx by HF treatment

摘要: Infrared absorption due to the surface chemical bonds on microcrystalline silicon (μc-Si) was investigated with recycling procedures of thermal oxygenation accompanied with dehydrogenation and HF etching. Si H bonds were reformed on the surface of μc-Si by HF etching of oxygenated μc-Si. The mechanism of the Si H bond formation was proposed. It was suggested that formation of= SiH 2, SiH 2 x or-SiH 3 group depended on the kind of a crystalline plane.