Investigation of the chemical properties of stain films on silicon by means of infrared spectroscopy

作者: K.H. Beckmann

DOI: 10.1016/0039-6028(65)90002-6

关键词: Silicon oxideConductivityInfrared spectroscopyMaterials scienceHydrideInorganic chemistrySiliconHydrofluoric acidAnalytical chemistryAbsorption (electromagnetic radiation)Nitric acid

摘要: Abstract Infrared spectra of transmission stain films electrochemically produced on p-type silicon in concentrated hydrofluoric acid are reported. The assignments some the absorption peaks given and from intensity it is concluded that these consist chiefly hydrides. Stain by immersion samples into 0.1 N solution nitric contained hydride oxide, over-all composition film varying between H 2 SiO HSiO 1.5 . This variation, however, did not depend type magnitude conductivity samples. oxidation both kinds under different conditions studied.

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