Ohmic and Rectifying Contacts to Porous Silicon

作者: Jayita Kanungo , Sukumar Basu

DOI: 10.1007/978-3-319-04508-5_72-1

关键词: Porous siliconOptoelectronicsMaterials scienceOhmic contact

摘要:

参考文章(64)
Enakshi Bhattacharya, P. Ramesh, C. Suresh Kumar, Studies on Gold/Porous Silicon/Crystalline Silicon Junctions Journal of Porous Materials. ,vol. 7, pp. 299- 301 ,(2000) , 10.1023/A:1009604703115
Leigh T. Canham, Inspec, Properties of Porous Silicon ,(1997)
Sukumar Basu, Jayita Kanungo, Nanocrystalline Porous Silicon InTech. ,(2011) , 10.5772/23355
A.J. Simons, T.I. Cox, M.J. Uren, P.D.J. Calcott, The electrical properties of porous silicon produced from n+ silicon substrates Thin Solid Films. ,vol. 255, pp. 12- 15 ,(1995) , 10.1016/0040-6090(94)05622-K
Inez N. Lees, Haohao Lin, Christie A. Canaria, Christian Gurtner, Michael J. Sailor, Gordon M. Miskelly, Chemical Stability of Porous Silicon Surfaces Electrochemically Modified with Functional Alkyl Species Langmuir. ,vol. 19, pp. 9812- 9817 ,(2003) , 10.1021/LA035197Y
V. Petrova‐Koch, T. Muschik, A. Kux, B. K. Meyer, F. Koch, V. Lehmann, Rapid‐thermal‐oxidized porous Si−The superior photoluminescent Si Applied Physics Letters. ,vol. 61, pp. 943- 945 ,(1992) , 10.1063/1.107736
D. Andsager, J. Hilliard, M. H. Nayfeh, Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutions Applied Physics Letters. ,vol. 64, pp. 1141- 1143 ,(1994) , 10.1063/1.110832