The electrical properties of porous silicon produced from n+ silicon substrates
作者： A.J. Simons , T.I. Cox , M.J. Uren , P.D.J. Calcott
DOI: 10.1016/0040-6090(94)05622-K
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摘要: Current transport through porous silicon (PS) films of 50% porosity fabricated from n-type (0.018 Ω cm) substrates has been studied. This achieved by comparing the current density J vs. voltage V characteristics for metal/PS/n + -Si/aluminium and metal/PS/aluminium devices. For case metal=aluminium, J-V are ohmic. metal=gold, consistent with formation a rectifying Schottky barrier height 0.74 eV at Au/PS contact. As contact is forward biased positive bias on gold, this implies that PS n type in nature. confirmed Hall effect measurements which give carrier concentration mobility 1.3×10 13 cm -3 30 2 -1 s respectively. pinning Fermi level an energy approximately same as (-/0) P b centres SiO -Si interface
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sci-hub.se 参考文章(7)
M. Ben-Chorin, F. Möller, F. Koch, Nonlinear electrical transport in porous silicon. Physical Review B. ,vol. 49, pp. 2981- 2984 ,(1994) , 10.1103/PHYSREVB.49.2981
N. J. Pulsford, G. L. J. A. Rikken, Y. A. R. R. Kessener, E. J. Lous, A. H. J. Venhuizen, Behavior of a rectifying junction at the interface between porous silicon and its substrate Journal of Applied Physics. ,vol. 75, pp. 636- 638 ,(1994) , 10.1063/1.355802
P.D.J. Calcott, K.J. Nash, L.T. Canham, M.J. Kane, D. Brumhead, Spectroscopic identification of the luminescence mechanism of highly porous silicon Journal of Luminescence. ,vol. 57, pp. 257- 269 ,(1993) , 10.1016/0022-2313(93)90144-C
E H Poindexter, MOS interface states: overview and physicochemical perspective Semiconductor Science and Technology. ,vol. 4, pp. 961- 969 ,(1989) , 10.1088/0268-1242/4/12/001
M.Ben Chorin, F. Möller, F. Koch, AC conductivity in porous silicon Journal of Luminescence. ,vol. 57, pp. 159- 162 ,(1993) , 10.1016/0022-2313(93)90125-7
Rolfe C. Anderson, Richard S. Muller, Charles W. Tobias, Investigations of the Electrical Properties of Porous Silicon Journal of The Electrochemical Society. ,vol. 138, pp. 3406- 3411 ,(1991) , 10.1149/1.2085423
L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Applied Physics Letters. ,vol. 57, pp. 1046- 1048 ,(1990) , 10.1063/1.103561