MOS interface states: overview and physicochemical perspective
作者： E H Poindexter
DOI: 10.1088/0268-1242/4/12/001
关键词: Scale (chemistry) 、 Interface (Java) 、 Nanotechnology 、 Computer science 、 Transistor 、 Engineering physics 、 Trap (computing) 、 Reliability (semiconductor) 、 Integrated circuit
摘要: The metal-oxide-semiconductor transistor has become the dominant device for very large-scale integrated circuits. performance and reliability of an MOS are heavily influenced by quality properties interface between oxide Si region directly beneath. Inherent, process-related, operationally environmentally generated states or traps exceedingly harmful disabling when present. Although controlled successfully semiempirical design, fabrication operational regimens, ever-smaller size-approaching scale in which a single trap can be important-makes further extension knowledge on basic physical chemical aspects essential confident technological progress. In addition, Si/SiO2 continue to merit research their own right. This paper briefly highlights selected topics from past present interface-state describes some properties.
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