作者: J Kočka , J Oswald , A Fejfar , R Sedlačík , V Železný
DOI: 10.1016/0040-6090(95)08108-9
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摘要: Abstract We have critically evaluated the mechanism of charge transport, understanding which is crucial for construction porous silicon electroluminescent devices. Multiple transport paths or space-charge-limited effects in give rise to complex field dependence activation energy (EA = 0.38−0.67 eV). Direct correlation between chemical composition internal surface nanocrystallites and properties demonstrated role tail states emphasized. Recommendations efficient electroluminescence, based on microstructure drift length, are summarized.