Growth and characterization of PNZST thin films

作者: Jiwei Zhai , X. Li , Y. Yao , Haydn Chen

DOI: 10.1016/S0921-5107(02)00457-9

关键词: Perovskite (structure)MicrostructureComposite materialLayer (electronics)DielectricAntiferroelectricityTransmission electron microscopyDiffractionOpticsThin filmMaterials science

摘要: Abstract We have grown and compared microstructures dielectric properties of PNZST thin films prepared on two different substrates by sol–gel methods. To ensure a complete single-phase perovskite film, capping layer PbO must be added to the top surface film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning transmission electron microscopy. Dielectric antiferroelectric were investigated as function temperature.

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