作者: Jiwei Zhai , X. Li , Y. Yao , Haydn Chen
DOI: 10.1016/S0921-5107(02)00457-9
关键词: Perovskite (structure) 、 Microstructure 、 Composite material 、 Layer (electronics) 、 Dielectric 、 Antiferroelectricity 、 Transmission electron microscopy 、 Diffraction 、 Optics 、 Thin film 、 Materials science
摘要: Abstract We have grown and compared microstructures dielectric properties of PNZST thin films prepared on two different substrates by sol–gel methods. To ensure a complete single-phase perovskite film, capping layer PbO must be added to the top surface film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning transmission electron microscopy. Dielectric antiferroelectric were investigated as function temperature.