Copper and copper bonding method

摘要: The invention relates to a copper and bonding method. method comprises the following technological steps that first, surface preprocessing is carried out on substrate chip, so roughness of smaller than 0.3nm, no particles with diameter larger 1 micron exist substrate, protruding height solder joints ranges from 100 nm 500 nm, evenness 5%; second, covered layer covering material in spin coating mode or vacuum lamination mode, wherein epoxy resin photodecomposition adhesive film back-side thermoplastic light resistance material; third, spots chip are aligned substrate; fourth, fixed through soft pressing head closed space filled inert gas, temperature 150 DEG C 250 C, pressure 50 kN kN, time 30 minutes 3 hours; fifth, after curing out, plurality chips stacked according steps. According method, high-density integration wires super-dense pitches can be achieved, fixation completed at lower 200 C.