作者: Yu-Hsiang Hu , Chung-Shi Liu
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摘要: A method is provided for bonding a first semiconductor substrate to second using low temperature thermo-compression. The comprises the step of in-situ mechanically scrubbing metal contact structure surfaces prior thermo-compression step, thereby planarizing removing oxides and/or contaminants from surfaces. followed by thermal annealing creating interface diffusion between and substrates