作者: H Moriceau , F Rieutord , F Fournel , Y Le Tiec , L Di Cioccio
DOI: 10.1088/2043-6262/1/4/043004
关键词: Wafer bonding 、 Microelectronics 、 Microelectromechanical systems 、 Direct bonding 、 Materials science 、 Homogeneous 、 Nanotechnology 、 Conductive materials 、 Stacking
摘要: Direct wafer bonding processes are being increasingly used to achieve innovative stacking structures. Many of them have already been implemented in industrial applications. This article looks at direct mechanisms, developed recently and trends. Homogeneous heterogeneous bonded structures successfully achieved with various materials. Active, insulating or conductive materials widely investigated. gives an overview Si SiO2 silicon-on-insulator type bonding, diverse material the transfer devices. clearly enables emergence development new applications, such as for microelectronics, microtechnologies, sensors, MEMs, optical devices, biotechnologies 3D integration.