Overview of recent direct wafer bonding advances and applications

作者: H Moriceau , F Rieutord , F Fournel , Y Le Tiec , L Di Cioccio

DOI: 10.1088/2043-6262/1/4/043004

关键词: Wafer bondingMicroelectronicsMicroelectromechanical systemsDirect bondingMaterials scienceHomogeneousNanotechnologyConductive materialsStacking

摘要: Direct wafer bonding processes are being increasingly used to achieve innovative stacking structures. Many of them have already been implemented in industrial applications. This article looks at direct mechanisms, developed recently and trends. Homogeneous heterogeneous bonded structures successfully achieved with various materials. Active, insulating or conductive materials widely investigated. gives an overview Si SiO2 silicon-on-insulator type bonding, diverse material the transfer devices. clearly enables emergence development new applications, such as for microelectronics, microtechnologies, sensors, MEMs, optical devices, biotechnologies 3D integration.

参考文章(32)
S. Cristoloveanu, F. Balestra, Chapter 6 – Silicon on Insulator: Technology and Devices Advanced Semiconductor and Organic Nano-Techniques. pp. 325- 365 ,(2003) , 10.1016/B978-012507060-7/50011-8
W. P. Maszara, G. Goetz, A. Caviglia, J. B. McKitterick, Bonding of silicon wafers for silicon‐on‐insulator Journal of Applied Physics. ,vol. 64, pp. 4943- 4950 ,(1988) , 10.1063/1.342443
S. Vincent, J.-D. Penot, I. Radu, F. Letertre, F. Rieutord, Study of the formation, evolution, and dissolution of interfacial defects in silicon wafer bonding Journal of Applied Physics. ,vol. 107, pp. 093513- ,(2010) , 10.1063/1.3357389
Atsuo Uchiyama, Katsuo Yoshizawa, Yasuyuki Nakazato, Takao Abe, Ken Sunagawa, Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers Japanese Journal of Applied Physics. ,vol. 32, pp. 334- 337 ,(1993) , 10.1143/JJAP.32.334
M. Bruel, Silicon on insulator material technology Electronics Letters. ,vol. 31, pp. 1201- 1202 ,(1995) , 10.1049/EL:19950805
C. Ventosa, F. Rieutord, L. Libralesso, C. Morales, F. Fournel, H. Moriceau, Hydrophilic low-temperature direct wafer bonding Journal of Applied Physics. ,vol. 104, pp. 123524- ,(2008) , 10.1063/1.3040701
S. Vincent, I. Radu, D. Landru, F. Letertre, F. Rieutord, A model of interface defect formation in silicon wafer bonding Applied Physics Letters. ,vol. 94, pp. 101914- ,(2009) , 10.1063/1.3100780
C. Gui, M. Elwenspoek, N. Tas, J. G. E. Gardeniers, The effect of surface roughness on direct wafer bonding Journal of Applied Physics. ,vol. 85, pp. 7448- 7454 ,(1999) , 10.1063/1.369377
Kenneth Diest, Melissa J. Archer, Jennifer A. Dionne, Young-Bae Park, Matthew J. Czubakowski, Harry A. Atwater, Silver diffusion bonding and layer transfer of lithium niobate to silicon Applied Physics Letters. ,vol. 93, pp. 092906- ,(2008) , 10.1063/1.2976560
A. Shigetou, T. Itoh, T. Suga, Direct bonding of CMP-Cu films by surface activated bonding (SAB) method Journal of Materials Science. ,vol. 40, pp. 3149- 3154 ,(2005) , 10.1007/S10853-005-2677-1