Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM.

摘要: Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization need to be improved. In this work, we confirmed the trade-off between retention endurance by using various top electrode thickness conditions. The was mainly due different amount oxygen in scavenging layer (Ta) vacancy switching (HfO2). (HfO2) will increased with increase Ta thickness. Therefore, thicker cells have worse because large can diffuse back into recombine vacancies filament. However, it has longer a source Hence, there exists relation under To improve both characteristics, proposed new method high-pressure hydrogen annealing (HPHA). thin small generate more maintaining (Ta), treated samples HPHA before deposition. Finally, obtained improved HfO2 based devices after treatment.