Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta 2 O 5 /TaO x /TiO 2 /TiN) with excellent performance (J MAX > 10 7 A/cm 2 )
Jiyong Woo , Jeonghwan Song , Kibong Moon , Ji Hyun Lee
symposium on vlsi technology 1 -2
16
2014
Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier
Sangheon Lee , Jeonghwan Song , Changhyuk Seong , Jiyong Woo
symposium on vlsi circuits 1 -2
6
2016
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
Jeonghwan Song , Jiyong Woo , Amit Prakash , Daeseok Lee
IEEE Electron Device Letters 36 ( 7) 681 -683
85
2015
Te-based binary OTS selectors with excellent selectivity (>10 5 ), endurance (>10 8 ) and thermal stability (>450°C)
Jongmyung Yoo , Yunmo Koo , Solomon Amsalu Chekol , Jaehyuk Park
symposium on vlsi technology 207 -208
7
2018
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
Fekadu Gochole Aga , Jiyong Woo , Sangheon Lee , Jeonghwan Song
AIP Advances 6 ( 2) 025203
15
2016
Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation
Sangheon Lee , Jeonghwan Song , Daeseok Lee , Jiyong Woo
Solid-state Electronics 104 70 -74
9
2015
Hardware implementation of neural network using pre-programmed resistive device for pattern recognition
Wooseok Choi , Kibong Moon , Myonghoon Kwak , Changhyuck Sung
Solid-state Electronics 153 79 -83
10
2019
Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory
Sangmin Lee , Jeonghwan Song , Seokjae Lim , Solomon Amsalu Chekol
Solid-state Electronics 153 8 -11
1
2019
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory.
Fekadu Gochole Aga , Jiyong Woo , Jeonghwan Song , Jaehyuk Park
Nanotechnology 28 ( 11) 115707
22
2017
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system
Changhyuck Sung , Seokjae Lim , Hyungjun Kim , Taesu Kim
Nanotechnology 29 ( 11) 115203
21
2018
Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing
Jeonghwan Song , Daeseok Lee , Jiyong Woo , Euijun Cha
ieee silicon nanoelectronics workshop 1 -2
2014
Multilevel conductance switching of a HfO 2 RRAM array induced by controlled filament for neuromorphic applications
Jiyong Woo , Jeonghwan Song , Kibong Moon , Sangheon Lee
ieee silicon nanoelectronics workshop 40 -41
5
2016
Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown
Changhyuck Sung , Jeonghwan Song , Sangheon Lee , Hyunsang Hwang
ieee silicon nanoelectronics workshop 84 -85
5
2016
Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory
Sangheon Lee , Jiyong Woo , Daeseok Lee , Euijun Cha
Applied Physics Letters 104 ( 5) 052108
11
2014
Comprehensive analysis of electro thermally driven nanoscale insulator–metal transition SmNiO3-based selector for cross-point memory array
Saiful Haque Misha , Nusrat Tamanna , Amit Prakash , Jeonghwan Song
Japanese Journal of Applied Physics 54
4
2015
Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM
Seokjae Lim , Sangheon Lee , Jiyong Woo , Daeseok Lee
non volatile memory technology symposium 1 -4
1
2014
8-inch wafer-scale HfO x -based RRAM for 1S-1R cross-point memory applications
Jiyong Woo , Jeonghwan Song , Kibong Moon , Seokjae Lim
non volatile memory technology symposium 1 -4
2014
Effect of TiO x -based tunnel barrier on non-linearity and switching reliability of resistive random access memory
Sangheon Lee , Daeseok Lee , Jiyong Woo , Euijun Cha
non volatile memory technology symposium 1 -4
1
2014
Various Threshold Switching Devices for Integrate and Fire Neuron Applications
Donguk Lee , Myonghoon Kwak , Kibong Moon , Wooseok Choi
Advanced electronic materials 5 ( 9) 1800866
76
2019
3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications
Jongmyung Yoo , Seong Hun Kim , Solomon Amsalu Chekol , Jaehyuk Park
Advanced electronic materials 5 ( 7) 1900196
7
2019