Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
作者： Fekadu Gochole Aga , Jiyong Woo , Sangheon Lee , Jeonghwan Song , Jaesung Park
DOI: 10.1063/1.4941752
关键词:
摘要: We investigate the effect of Cu concentration On-state resistance retention characteristics W/Cu/Ti/HfO2/Pt memory cell. The development RRAM device for application depends on understanding failure mechanism and key parameters optimization. In this study, we develop analytical expression cations (Cu+) diffusion model using Gaussian distribution detailed analysis data time at high temperature. It is found that improvement not only conductive filament (CF) size but also atoms density in CF. Based simulation result, better observed electron wave function associated with Cu+ overlap an extended state formation. This can be verified by calculation atom defects inside filament, based model. importance reliability corresponding local temperature were analyzed ...
scitation.org
harvard.edu
aip.org 
core.ac.uk 
sci-hub.se 参考文章(13)
B.D. Briggs, S.M. Bishop, K.D. Leedy, N.C. Cady, Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition Thin Solid Films. ,vol. 562, pp. 519- 524 ,(2014) , 10.1016/J.TSF.2014.04.084
Shimeng Yu, Yang Yin Chen, Ximeng Guan, H-S Philip Wong, Jorge A Kittl, None, A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory Applied Physics Letters. ,vol. 100, pp. 043507- ,(2012) , 10.1063/1.3679610
Hyunsang Hwang, Yunmo Koo, Stefano Ambrogio, Jiyong Woo, Jeonghwan Song, Daniele Ielmini, Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory IEEE Electron Device Letters. ,vol. 36, pp. 238- 240 ,(2015) , 10.1109/LED.2015.2394302
Heng-Yuan Lee, Pang-Shiu Chen, Ching-Chiun Wang, Siddheswar Maikap, Pei-Jer Tzeng, Cha-Hsin Lin, Lurng-Shehng Lee, Ming-Jinn Tsai, Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide Japanese Journal of Applied Physics. ,vol. 46, pp. 2175- 2179 ,(2007) , 10.1143/JJAP.46.2175
Rainer Waser, Masakazu Aono, Nanoionics-based resistive switching memories Nature Materials. ,vol. 6, pp. 833- 840 ,(2007) , 10.1038/NMAT2023
Stefano Larentis, Federico Nardi, Simone Balatti, David C. Gilmer, Daniele Ielmini, Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling IEEE Transactions on Electron Devices. ,vol. 59, pp. 2468- 2475 ,(2012) , 10.1109/TED.2012.2202320
Xiaoxin Xu, Hangbing Lv, Hongtao Liu, Tiancheng Gong, Guoming Wang, Meiyun Zhang, Yang Li, Qi Liu, Shibing Long, Ming Liu, Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation IEEE Electron Device Letters. ,vol. 36, pp. 129- 131 ,(2015) , 10.1109/LED.2014.2379961
D. Ielmini, F. Nardi, C. Cagli, A.L. Lacaita, Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories IEEE Electron Device Letters. ,vol. 31, pp. 353- 355 ,(2010) , 10.1109/LED.2010.2040799
Shimeng Yu, H.-S Philip Wong, Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) IEEE Transactions on Electron Devices. ,vol. 58, pp. 1352- 1360 ,(2011) , 10.1109/TED.2011.2116120
D. Kamalanathan, U. Russo, D. Ielmini, M.N. Kozicki, Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory IEEE Electron Device Letters. ,vol. 30, pp. 553- 555 ,(2009) , 10.1109/LED.2009.2016991