Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown
作者： Changhyuck Sung , Jeonghwan Song , Sangheon Lee , Hyunsang Hwang
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摘要: In this study, we reported suppressed reset breakdown, which causes endurance failure, by optimizing bias scheme in HfO 2 -based 1T1R RRAM device. Since the resistance of operation controls effective transistor gate (V GS eff=V -I D *R ) limits saturation drain current, optimum can supply sufficient current low state and limit high state. As a result, breakdown was successfully applying voltage significantly improved with maintaining ratio.
sci-hub.se 参考文章(2)
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