Multilevel conductance switching of a HfO 2 RRAM array induced by controlled filament for neuromorphic applications
作者： Jiyong Woo , Jeonghwan Song , Kibong Moon , Sangheon Lee , Jaesung Park
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摘要: We investigate multilevel characteristics in resistive memory serving as synaptic device for neuromorphic computing system. Our findings reveal that an abruptly formed filament degrades analog switching behavior during potentiation. By means of balanced SET/RESET pulse operation and modulation gap to control the growth, a gradually changed conductance was achieved.
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