Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
作者： Jeonghwan Song , Jiyong Woo , Amit Prakash , Daeseok Lee , Hyunsang Hwang
关键词: Programmable metallization cell 、 High selectivity 、 Ionization 、 Electrolyte 、 Protein filament 、 Nanotechnology 、 Threshold voltage 、 Type (model theory) 、 Materials science 、 Steep slope 、 Molecular physics
摘要: In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based device showed high selectivity ( $\sim 10^{\mathrm {\mathbf {7}}}$ ) and steep slope $ mV/decade). observed switching in programmable metallization cell occurred due to the spontaneous rupturing silver (Ag) filament. Ag ionization minimize steric repulsion between surrounding TiO2 electrolyte was main origin rupture.
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