Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM
作者： Seokjae Lim , Sangheon Lee , Jiyong Woo , Daeseok Lee , Jaesung Park
DOI: 10.1109/NVMTS.2014.7060857
关键词:
摘要: We demonstrate the device characteristics of W/Cu/N-GST/Al 2 O 3 /Pt conductive-bridging RAM, focusing on nitrogen-doped Ge Sb Te 5 buffer layer to realize non-volatile memory applications. The on/off ratio typical Cu/Al -based CBRAM was improved from 102 105 with N-GST layer. switching uniformity also compared that a non-buffer device. properties were realized are attributed effects such as controlled Cu-ion injection, internal resistor, and Joule heating confinement during reset process. Furthermore, verify effect nitrogen properties, we GST layers. believe doped helped control injection into resistive layer, confine joule process, enabling high uniformity.
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