Multi-state resistance switching and variability analysis of HfO x based RRAM for ultra-high density memory applications
Amit Prakash , J-S. Park , J. Song , S-J. Lim
international symposium on next generation electronics 1 -2
6
2015
Communication—Excellent Threshold Selector Characteristics of Cu2S-Based Atomic Switch Device
Seokjae Lim , Jiyong Woo , Hyunsang Hwang
ECS Journal of Solid State Science and Technology 6 ( 9)
2
2017
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
Fekadu Gochole Aga , Jiyong Woo , Sangheon Lee , Jeonghwan Song
AIP Advances 6 ( 2) 025203
15
2016
Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory
Sangmin Lee , Jeonghwan Song , Seokjae Lim , Solomon Amsalu Chekol
Solid-state Electronics 153 8 -11
1
2019
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory.
Fekadu Gochole Aga , Jiyong Woo , Jeonghwan Song , Jaehyuk Park
Nanotechnology 28 ( 11) 115707
22
2017
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system
Changhyuck Sung , Seokjae Lim , Hyungjun Kim , Taesu Kim
Nanotechnology 29 ( 11) 115203
21
2018
WO x -Based Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks
Wooseok Choi , Sang-Gyun Gi , Donguk Lee , Seokjae Lim
IEEE Transactions on Nanotechnology 19 594 -600
2
2020
Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM
Seokjae Lim , Sangheon Lee , Jiyong Woo , Daeseok Lee
non volatile memory technology symposium 1 -4
1
2014
8-inch wafer-scale HfO x -based RRAM for 1S-1R cross-point memory applications
Jiyong Woo , Jeonghwan Song , Kibong Moon , Seokjae Lim
non volatile memory technology symposium 1 -4
2014
Effect of TiO x -based tunnel barrier on non-linearity and switching reliability of resistive random access memory
Sangheon Lee , Daeseok Lee , Jiyong Woo , Euijun Cha
non volatile memory technology symposium 1 -4
1
2014
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy
Niloufar Raeis‐Hosseini , Seokjae Lim , Hyunsang Hwang , Junsuk Rho
Advanced electronic materials 4 ( 11) 1800360
17
2018
Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018)
Seokjae Lim , Hyunsang Hwang , Junsuk Rho , Niloufar Raeis‐Hosseini
Advanced electronic materials 4 ( 11) 1870052
2018
Various Threshold Switching Devices for Integrate and Fire Neuron Applications
Donguk Lee , Myonghoon Kwak , Kibong Moon , Wooseok Choi
Advanced electronic materials 5 ( 9) 1800866
76
2019
Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier
Jaesung Park , Jiyong Woo , Amit Prakash , Sangheon Lee
AIP Advances 6 ( 5) 055114
9
2016
Communication—Reduced Off-Current of NbO2by Thermal Oxidation of Polycrystalline Nb Wire
Solomon Amsalu Chekol , Jeonghwan Song , Jaehyuk Park , Euijun Cha
ECS Journal of Solid State Science and Technology 6 ( 9)
2
2017
Selector devices for x-point memory
Jeonghwan Song , Yunmo Koo , Jaehyuk Park , Seokjae Lim
Woodhead Publishing 365 -390
3
2019
CMOS compatible low-power volatile atomic switch for steep-slope FET devices
Seokjae Lim , Jongmyung Yoo , Jeonghwan Song , Jiyong Woo
Applied Physics Letters 113 ( 3) 033501
2
2018
An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application
Solomon Amsalu Chekol , Jeonghwan Song , Jongmyung Yoo , Seokjae Lim
Applied Physics Letters 114 ( 10) 102106
7
2019
Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems
Seokjae Lim , Myounghoon Kwak , Hyunsang Hwang
IEEE Transactions on Electron Devices 65 ( 9) 3976 -3981
16
2018
Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
Jeonghwan Song , Jiyong Woo , Jongmyung Yoo , Solomon Amsalu Chekol
IEEE Transactions on Electron Devices 64 ( 11) 4763 -4767
12
2017