Multi-state resistance switching and variability analysis of HfO x based RRAM for ultra-high density memory applications
Amit Prakash , J-S. Park , J. Song , S-J. Lim
international symposium on next generation electronics 1 -2
6
2015
Te-based binary OTS selectors with excellent selectivity (>10 5 ), endurance (>10 8 ) and thermal stability (>450°C)
Jongmyung Yoo , Yunmo Koo , Solomon Amsalu Chekol , Jaehyuk Park
symposium on vlsi technology 207 -208
7
2018
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
Fekadu Gochole Aga , Jiyong Woo , Sangheon Lee , Jeonghwan Song
AIP Advances 6 ( 2) 025203
15
2016
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory.
Fekadu Gochole Aga , Jiyong Woo , Jeonghwan Song , Jaehyuk Park
Nanotechnology 28 ( 11) 115707
22
2017
Field-induced nucleation switching in binary ovonic threshold switches
Sangmin Lee , Jongmyung Yoo , Jaehyuk Park , Hyunsang Hwang
Applied Physics Letters 115 ( 23) 233503
3
2019
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
Euijun Cha , Jaehyuk Park , Jiyong Woo , Daeseok Lee
Applied Physics Letters 108 ( 15) 153502
45
2016
Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM
Seokjae Lim , Sangheon Lee , Jiyong Woo , Daeseok Lee
non volatile memory technology symposium 1 -4
1
2014
Effect of TiO x -based tunnel barrier on non-linearity and switching reliability of resistive random access memory
Sangheon Lee , Daeseok Lee , Jiyong Woo , Euijun Cha
non volatile memory technology symposium 1 -4
1
2014
Various Threshold Switching Devices for Integrate and Fire Neuron Applications
Donguk Lee , Myonghoon Kwak , Kibong Moon , Wooseok Choi
Advanced electronic materials 5 ( 9) 1800866
76
2019
3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications
Jongmyung Yoo , Seong Hun Kim , Solomon Amsalu Chekol , Jaehyuk Park
Advanced electronic materials 5 ( 7) 1900196
7
2019
Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector
Jaehyuk Park , Euijun Cha , Ilya Karpov , Hyunsang Hwang
Applied Physics Letters 108 ( 23) 232101
23
2016
Communication—Reduced Off-Current of NbO2by Thermal Oxidation of Polycrystalline Nb Wire
Solomon Amsalu Chekol , Jeonghwan Song , Jaehyuk Park , Euijun Cha
ECS Journal of Solid State Science and Technology 6 ( 9)
2
2017
NbO 2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time
Jaehyuk Park , Dongwook Lee , JongMyung Yoo , Hyunsang Hwang
international electron devices meeting
6
2017
Selector devices for x-point memory
Jeonghwan Song , Yunmo Koo , Jaehyuk Park , Seokjae Lim
Woodhead Publishing 365 -390
3
2019
Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-point Array
Sangheon Lee , Sooeun Lee , Kibong Moon , Jaehyuk Park
international memory workshop 1 -4
6
2015
CMOS compatible low-power volatile atomic switch for steep-slope FET devices
Seokjae Lim , Jongmyung Yoo , Jeonghwan Song , Jiyong Woo
Applied Physics Letters 113 ( 3) 033501
2
2018
Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application.
Jaehyuk Park , Tobias Hadamek , Agham B. Posadas , Euijun Cha
Scientific Reports 7 ( 1) 4068 -4068
35
2017
Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application
Jaehyuk Park , Euijun Cha , Daeseok Lee , Sangheon Lee
Microelectronic Engineering 147 318 -320
14
2015
Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective
Sangmin Lee , Jongmyung Yoo , Jaehyuk Park , Hyunsang Hwang
IEEE Transactions on Electron Devices 67 ( 7) 2878 -2883
10
2020
NbO 2 -Based Frequency Storable Coupled Oscillators for Associative Memory Application
Donguk Lee , Euijun Cha , Jaehyuk Park , Changhyuck Sung
IEEE Journal of the Electron Devices Society 6 1 -1
7
2018