Memory characteristics of IrO x metal nanocrystals embedded in high-κ Al 2 O 3 films with IrO x metal gate
S. Maikap , J.-R. Yang , W.-C. Li , W. Banerjee
international conference on nanotechnology 378 -381
2009
Highly Thermally Stable and Reproducible of ALD RuO 2 Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good Retention
S. Maikap , W. Banerjee , P.-J. Tzeng , T.-Y. Wang
international symposium on vlsi technology, systems, and applications 50 -51
2008
Physical and electrical characteristics of atomic layer deposited RuO 2 nanocrystals for nanoscale nonvolatile memory applications
W. Banerjee , S. Maikap
international conference on solid-state and integrated circuits technology 951 -954
2008
Enhanced flash memory device characteristics using ALD TiN/Al 2 O 3 nanolaminate charge storage layers
S. Maikap , S. Z. Rahaman , W. Banerjee , C.-H. Lin
international conference on solid-state and integrated circuits technology 958 -961
2008
Nanoscale flash and resistive switching memories using IrO x metal nanocrystals
W. Banerjee , S. Maikap
ieee international conference on solid-state and integrated circuit technology 1115 -1117
2010
Improvement of resistive switching memory parameters using IrO x Nanodots in high-κ AlO x Cross-Point
W. Banerjee , S. Maikap
international symposium on vlsi technology, systems, and applications 1 -2
1
2012
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
W. Banerjee , S. Maikap , T.-C. Tien , W.-C. Li
Journal of Applied Physics 110 ( 7) 074309
30
2011
Flash memory device characteristics of atomic layer deposited crystallite Al 2 O 3 films with large memory window and long retention
S. Maikap , W. Banerjee , S. Z. Rahaman , A. Das
ieee silicon nanoelectronics workshop 1 -2
2008
Characteristics of pH sensors fabricated by using protein-mediated CdSe/ZnS quantum dots
S. Maikap , A. Prakash , W. Banerjee , Anirban Das
Microelectronics Reliability 50 ( 5) 747 -752
5
2010
Unipolar Resistive Switching Memory Characteristics Using IrOx/Al2O3/SiO2/p-Si MIS Structure
W. Banerjee , S. Maikap , Y.- Y. Chen , J. R. Yang
ECS Transactions 45 ( 3) 345 -348
2
2012
Temperature-dependent physical and memory characteristics of atomic-layer-deposited RuO x metal nanocrystal capacitors
S. Maikap , W. Banerjee , T. C. Tien , T. Y. Wang
Journal of Nanomaterials 2011 ( 2011) 53
6
2011
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
W. Banerjee , S. Maikap , S. Z. Rahaman , A. Prakash
Journal of The Electrochemical Society 159 ( 2)
28
2011
High-k Hf-Based Nanocrystal Memory Capacitors with IrOx Metal Gate for NAND Application
W. Banerjee , S. Maikap
memory technology, design and testing 31 -33
2009
Understanding of the abnormal unipolar resistance switching behavior in CBRAM
H.T. Sun , Q. Liu , D.L. Xun , K.K. Zhang
The Japan Society of Applied Physics
2015
Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure
X. B. Yan , H. Hao , Y. F. Chen , Y. C. Li
Applied Physics Letters 105 ( 9) 093502
33
2014
Nanocrystals for silicon-based light-emitting and memory devices
S K Ray , S Maikap , W Banerjee , S Das
Journal of Physics D 46 ( 15) 153001
94
2013
Ge nanowires for nanoscale nonvolatile memory applications
S Maikap , S Majumdar , W Banerjee , S Mondal
Charge storage characteristics of ALD high-k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices for nanoscale NAND applications
Siddheswar Maikap , SZ Rahaman , W Banerjee , A Das
2008 International Electron Devices and Materials Symposia (IEDMS 2008)
2008
Memory characteristics of atomic layer deposited high-κ HfAlO nanocrystal capacitors with IrOx metal gate
A Das , W Banerjee , SZ Rahaman , S Maikap
2015 IEEE Int. Electron Devices Meeting (IEDM)
Q Luo , X Xu , H Liu , H Lv
IEEE 10.2. 1 -10.2. 4
150
2015