Highly Thermally Stable and Reproducible of ALD RuO 2 Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good Retention

摘要: Highly thermally stable (~1000degC) and reproducible of ALD RuO2 nanocrystal floating gate memory devices with a large hysteresis window DeltaV ap 14.6 V under voltage plusmn10 have been observed. The 4.2 small plusmn3 is also Both program erase speeds DeltaVFB>1 V@100 mus are achieved Fowler-Nordheim injections. Excellent endurance 8.5V, before after 104 cycles 4.9 10 years retention (9% charge loss at 20degC -20% 85degC) obtained. high-performance flash can be operated below 5 V.