Ge nanowires for nanoscale nonvolatile memory applications

摘要: One-dimensional semiconductor nanostructures such as nanotubes and nanowires are being actively investigated for applications in electronic, photonic and sensor devices [1]. Group-IV semiconductor nanowire devices are potentially attractive because of their compatibility with existing Si complementary metal-oxide-semiconductor (MOS) integrated circuit technology. The use of floating gate memory composed of isolated dots reduces charge loss for a scaled device and improves memory characteristics such as endurance, and write/erase speeds with low operational voltage [2]. Ge quantum dot [3] based nano-floating gate memory using metal-oxide semiconductor (MOS) structures has recently attracted interest due to the potential application in next generation integrated nanoscale nonvolatile memories. The use of nanowires offers smaller operating voltages, better endurance characteristics and faster write …