Flash memory device characteristics of atomic layer deposited crystallite Al 2 O 3 films with large memory window and long retention
作者： S. Maikap , W. Banerjee , S. Z. Rahaman , A. Das
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摘要: Enhanced non-volatile memory device characteristics of crystallite Al2O3 film (?900°C) with a large hysteresis window ?V ? 9.8 V under gate voltage ±15 have been observed due to crystallization the film. The 3.8 ±10 is also observed. Both program and erase speeds ?V~2.6V@1s are achieved Fowler-Nordheim injections. A 4.0 after ~2×l06s retention (~30% charge loss) obtained. high-performance ALD flash devices can be operated at ?10V.
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