Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
作者： Euijun Cha , Jaehyuk Park , Jiyong Woo , Daeseok Lee , Amit Prakash
DOI: 10.1063/1.4945367
关键词: Voltage 、 Oxide 、 Scaling 、 Threshold voltage 、 Materials science 、 Resistive random-access memory 、 Nanotechnology 、 Insulator (genetics) 、 Metal 、 Optoelectronics 、 Forming processes
摘要: The transition metal oxide, NbO2, which exhibits an insulator to (IMT) is regarded as a promising selector device be integrated with resistive memory for cross point array application. In this study, we comprehensively investigated the scaling of NbO2 using mushroom structure. A thorough understanding behavior forming voltage (Vf), threshold (Vth), and current (Ith) essential evaluate potential well selectivity selector. Importantly, by analyzing trend current, believed that IMT strongly affected filamentary conducting path formed during process. findings provide promise maximize performance minimizing inside layer.
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