Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory.
作者： Fekadu Gochole Aga , Jiyong Woo , Jeonghwan Song , Jaehyuk Park , Seokjae Lim
关键词: Electrochemistry 、 Optoelectronics 、 Nanotechnology 、 Materials science 、 Programmable metallization cell 、 Voltage 、 Diffusion (business) 、 Conductance 、 Reduction (complexity) 、 Thermal conduction 、 Electrical conductor
摘要: In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable reproducible conductance states integer multiples fundamental obtained by optimizing voltage rate Ti-diffusion barrier (DB) at Cu/HfO2 interface. Owing to controlled diffusion Cu ions Ti-DB optimized rate, through which it was possible control time delay ion reduction, more than seven levels discrete were clearly observed. Analytical modeling performed determine rate-limiting step in filament growth based on an electrochemical redox reaction. Our understanding mechanisms behaviors provide a promising future for multi-bit CBRAM device.
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