Conductance quantization in oxide-based resistive switching devices
作者： Qingxi Duan , Jingxian Li , Jiadi Zhu , Teng Zhang , Jingjing Yang
DOI: 10.1109/CSTIC.2019.8755752
关键词:
摘要: Oxide-based resistive switching devices have tremendous potential in next-generation nonvolatile memory and neuromorphic applications. Here, the emergence of quantized conductance is investigated based on Ta 2 O 5 or HfO . By applying sweeping voltages with different current compliances using consecutive voltage pulses, states including integer half multiples quantum (G 0 ) were observed, suggesting well-controlled formation atomic point contacts. Compared Pt/Ta/Ta /Pt devices, a larger number obtained Pt/Ta/HfO devices. Such are inherently discrete multilevel, which could be promising for applications as multilevel artificial synapses hardware neural networks.
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