Te-based binary OTS selectors with excellent selectivity (>10 5 ), endurance (>10 8 ) and thermal stability (>450°C)

作者: Jongmyung Yoo , Yunmo Koo , Solomon Amsalu Chekol , Jaehyuk Park , Jeonghwan Song

DOI: 10.1109/VLSIT.2018.8510681

关键词: Thermal stabilityBinary numberTelluriumLow leakageAtomic radiusSelectivityOptoelectronicsControl parametersMaterials scienceTelluride

摘要: We have investigated various Te-based binary materials for Ovonic Threshold Switch (OTS) selector application. found that both Te composition and difference in atomic radius of elements composing the telluride film are key control parameters to maximize OTS characteristics such as low leakage current (<5 nA device area 30 nm2), good switching endurance (108), thermal stability (450°C).

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