Design Space Analysis for Cross-Point 1S1MTJ MRAM: Selector–MTJ Cooptimization
作者： Hung-Li Chiang , Tzu-Chiang Chen , Ming-Yuan Song , Yu-Sheng Chen , Jung-Piao Chiu
关键词:
摘要: To increase the density of magnetoresistive random access memory (MRAM) beyond 1T1MTJ MRAM cell in use today, design space for 1S1MTJ array is analyzed by cooptimizing both selectors and MTJs. Current low-resistance MTJs are not suitable MRAM. Threshold-type would induce a strong read disturb on MTJ due to snapback voltage ( ${V}_{\mathrm {TH}}$ – {HOLD}}$ ) when selector turned on. Also, exponential-type degrade margin (RM) its large ON-state resistance. When using existing achieve 1-M-bit array, it necessary adjust product resistance area (RA) diameter MTJ. An with RA $= 15\,\,\Omega \cdot \mu \text{m}^{2}$ = 50 nm can meet criterion RM > 10% (exponential slope 300–500 mV/decade current ~ 1 MA/cm2) threshold-type {HOLD}} \sim ~250$ mV). A accommodating variation around 1% be found tunnel magnetoresistance ratio (TMR) < 250%. With an increased TMR 250%–350% MTJ, tolerance variations improved 2% 4%, respectively. This provides chance selectors.
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