Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application.

摘要: NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that IMT behavior follows field-induced nucleation by investigating delay time dependency at various voltages and temperatures. Based on investigation, reveal origin leakage current in NbOx is partly insufficient Schottky barrier height originating from interface defects between electrodes layer. The problem can be addressed inserting thin NiOy layers. inserted device drift-free exhibits high Ion/Ioff ratio (>5400), fast switching speed ( 453 K) characteristics which are highly suitable selector application x-point memory arrays. We show with NiOx interlayers series resistive random access (ReRAM) demonstrates improved readout margin (>29 word lines) array application.