8-inch wafer-scale HfO x -based RRAM for 1S-1R cross-point memory applications
作者： Jiyong Woo , Jeonghwan Song , Kibong Moon , Seokjae Lim , Daeseok Lee
DOI: 10.1109/NVMTS.2014.7060853
关键词:
摘要: In this paper, a bipolar resistive random access memory (RRAM) device with fab-friendly materials stack (TiN/Ti/HfO 2 /TiN) and process in via-hole substrate 200 nm cell size was successfully demonstrated on an 8-inch wafer scale. Furthermore, the robust characteristics reliable switching uniformity stability were experimentally confirmed at level. Finally, from standpoint of array architecture, fabricated evaluated various selector devices such as conventional silicon-based transistor newly developed tunneling-based diode device.
sci-hub.se 参考文章(9)
I.G. Baek, M.S. Lee, S. Sco, M.J. Lee, D.H. Seo, D.-S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.-I. Chung, J.T. Moon, Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses international electron devices meeting. pp. 587- 590 ,(2004) , 10.1109/IEDM.2004.1419228
D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, M. Fanciulli, Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices Journal of Applied Physics. ,vol. 109, pp. 034506- ,(2011) , 10.1063/1.3544499
G. Pourtois, H. Bender, L. Altimime, D.J. Wouters, J.A. Kittl, M. Jurczak, B. Govoreanu, G.S. Kar, Y-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I.P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation international electron devices meeting. ,(2011) , 10.1109/IEDM.2011.6131652
Myoung-Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, Ji Hyun Hur, Young-Bae Kim, Chang-Jung Kim, David H. Seo, Sunae Seo, U-In Chung, In-Kyeong Yoo, Kinam Kim, A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Nature Materials. ,vol. 10, pp. 625- 630 ,(2011) , 10.1038/NMAT3070
H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, M.-J. Tsai, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM international electron devices meeting. pp. 1- 4 ,(2008) , 10.1109/IEDM.2008.4796677
Deok-Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang, Jong Myeong Jeon, Min Hwan Lee, Gun Hwan Kim, Xiang-Shu Li, Gyeong-Su Park, Bora Lee, Seungwu Han, Miyoung Kim, Cheol Seong Hwang, Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Nature Nanotechnology. ,vol. 5, pp. 148- 153 ,(2010) , 10.1038/NNANO.2009.456
Zheng Fang, Xin Peng Wang, Joon Sohn, Bao Bin Weng, Zhi Ping Zhang, Zhi Xian Chen, Yan Zhe Tang, Guo-Qiang Lo, J. Provine, Simon S. Wong, H.-S. Philip Wong, Dim-Lee Kwong, The Role of Ti Capping Layer in HfO x -Based RRAM Devices IEEE Electron Device Letters. ,vol. 35, pp. 912- 914 ,(2014) , 10.1109/LED.2014.2334311
ChiaHua Ho, Cho-Lun Hsu, Chun-Chi Chen, Jan-Tsai Liu, Cheng-San Wu, Chien-Chao Huang, Chenming Hu, Fu-Liang Yang, 9nm half-pitch functional resistive memory cell with <1µA programming current using thermally oxidized sub-stoichiometric WO x film international electron devices meeting. pp. 5703389- ,(2010) , 10.1109/IEDM.2010.5703389
Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, Ming Liu, Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Advanced Materials. ,vol. 24, pp. 1844- 1849 ,(2012) , 10.1002/ADMA.201104104