Communication—Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM
Changhyuck Sung , Jeonghwan Song , Jiyong Woo , Hyunsang Hwang
ECS Journal of Solid State Science and Technology 6 ( 7)
2
2017
Communication—Reduced Off-Current of NbO2by Thermal Oxidation of Polycrystalline Nb Wire
Solomon Amsalu Chekol , Jeonghwan Song , Jaehyuk Park , Euijun Cha
ECS Journal of Solid State Science and Technology 6 ( 9)
2
2017
Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse
Sangheon Lee , Daeseok Lee , Jiyong Woo , Euijun Cha
international electron devices meeting
21
2013
BEOL compatible (300°C) TiN/TiO x /Ta/TiN 3D nanoscale (∼10nm) IMT selector
Daeseok Lee , Jaesung Park , Sangsu Park , Jiyong Woo
international electron devices meeting
13
2013
Nanoscale (∼10nm) 3D vertical ReRAM and NbO 2 threshold selector with TiN electrode
Euijun Cha , Jiyong Woo , Daeseok Lee , Sangheon Lee
international electron devices meeting
61
2013
Selector devices for x-point memory
Jeonghwan Song , Yunmo Koo , Jaehyuk Park , Seokjae Lim
Woodhead Publishing 365 -390
3
2019
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM.
Jeonghwan Song , Daeseok Lee , Jiyong Woo , Euijun Cha
Journal of Nanoscience and Nanotechnology 16 ( 5) 4758 -4761
2016
CMOS compatible low-power volatile atomic switch for steep-slope FET devices
Seokjae Lim , Jongmyung Yoo , Jeonghwan Song , Jiyong Woo
Applied Physics Letters 113 ( 3) 033501
2
2018
Hardware implementation of associative memory characteristics with analogue-type resistive-switching device.
Kibong Moon , Sangsu Park , Junwoo Jang , Daeseok Lee
Nanotechnology 25 ( 49) 495204
22
2014
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO 2 RRAM Synapse for Neuromorphic Systems
Jiyong Woo , Kibong Moon , Jeonghwan Song , Myounghoon Kwak
IEEE Transactions on Electron Devices 63 ( 12) 5064 -5067
38
2016
An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application
Solomon Amsalu Chekol , Jeonghwan Song , Jongmyung Yoo , Seokjae Lim
Applied Physics Letters 114 ( 10) 102106
7
2019
Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application
Jaehyuk Park , Euijun Cha , Daeseok Lee , Sangheon Lee
Microelectronic Engineering 147 318 -320
14
2015
The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory
Sangheon Lee , Daeseok Lee , Jiyong Woo , Euijun Cha
Microelectronic Engineering 147 321 -324
4
2015
Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
Jeonghwan Song , Jiyong Woo , Jongmyung Yoo , Solomon Amsalu Chekol
IEEE Transactions on Electron Devices 64 ( 11) 4763 -4767
12
2017
Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch Device
Jongmyung Yoo , Donguk Lee , Jaehyuk Park , Jeonghwan Song
IEEE Journal of the Electron Devices Society 6 821 -824
19
2018
A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application.
Solomon Amsalu Chekol , Jongmyung Yoo , Jaehyuk Park , Jeonghwan Song
Nanotechnology 29 ( 34) 345202
27
2018
Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices.
Jongmyung Yoo , Jeonghwan Song , Hyunsang Hwang
Nanotechnology 29 ( 36) 365707
1
2018
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems.
Jongwon Lee , Seokjae Lim , Myonghoon Kwak , Jeonghwan Song
Nanotechnology 30 ( 25) 255202
9
2019
Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
Jeonghwan Song , Amit Prakash , Daeseok Lee , Jiyong Woo
Applied Physics Letters 107 ( 11) 113504
39
2015
Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering
Sangheon Lee , Daeseok Lee , Jiyong Woo , Euijun Cha
IEEE Electron Device Letters 34 ( 12) 1515 -1517
17
2013